Številka izdelka proizvajalca:
TSM160N10LCR RLG
Product Overview
Proizvajalec:
Taiwan Semiconductor Corporation
DiGi Electronics Številka dela:
TSM160N10LCR RLG-DG
Opis:
MOSFET N-CH 100V 46A 8PDFN
Podroben opis:
N-Channel 100 V 46A (Tc) 83W (Tc) Surface Mount 8-PDFN (5x6)
Zaloga:
10887 Kosi Nova Originalna Na Zalogi
12897845
Zahtevaj ponudbo
Količina
Minimun 1
Minimun 1
(*) je obvezno
Naši odgovor boste prejeli v 24 urah
Naši odgovor boste prejeli v 24 urah
POŠTITE
TSM160N10LCR RLG Tehnične specifikacije
Kategorija
FETs, MOSFETs, Single FETs, MOSFETs
Proizvajalec
Taiwan Semiconductor
Pakiranje
Tape & Reel (TR)
Series
-
Product Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100 V
Current - Continuous Drain (Id) @ 25°C
46A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
16mOhm @ 8A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
73 nC @ 10 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
4431 pF @ 50 V
FET Feature
-
Power Dissipation (Max)
83W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
8-PDFN (5x6)
Package / Case
8-PowerTDFN
Base Product Number
TSM160
Tehnični list in dokumenti
Datasheets
Dodatne informacije
Other Names
TSM160N10LCR RLGTR
TSM160N10LCR RLGDKR
TSM160N10LCRRLGDKR
TSM160N10LCR RLGTR-DG
TSM160N10LCR RLGDKR-DG
TSM160N10LCR RLGCT-DG
TSM160N10LCRRLGCT
TSM160N10LCRRLGTR
TSM160N10LCR RLGCT
Standard Package
2,500
Okoljska in izvozna klasifikacija
RoHS Status
ROHS3 Compliant
Moisture Sensitivity Level (MSL)
1 (Unlimited)
REACH Status
REACH Unaffected
ECCN
EAR99
HTSUS
8541.29.0095
DIGI Certifikat
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